2N3903.PDF datasheet pdf

 Semiconductor Components Industries, LLC, 2001 November, 2000 – Rev. 3 1Publication Order Number: 2N3903/D 2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector–Emitter VoltageV CEO 40Vdc Collector–Base VoltageV CBO 60Vdc Emitter–Base VoltageV EBO 6.0Vdc Collector Current – ContinuousI C 200mAdc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 625 5.0 mW mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 1.5 12 Watts mW/°C Operating and Storage Junction Temperature Range T J , T stg –55 to +150 °C THERMAL CHARACTERISTICS (Note 1.) Characteristic SymbolMaxUnit Thermal Resistance, Junction to Ambient R θJA 200°C/W Thermal Resistance, Junction to Case R θJC 83.3°C/W 1. Indicates Data in addition to JEDEC Requirements. DevicePackageShipping ORDERING INFORMATION 2N3903TO–92 http://onsemi.com TO–92 CASE 29 STYLE 1 5000 Units/Box 3 2 1 Preferred devices are recommended choices for future use and best overall value. 2N3903RLRMTO–922000/Ammo Pack COLLECTOR 3 2 BASE 1 EMITTER 2N3904TO–925000 Units/Box 2N3904RLRATO–922000/Tape & Reel 2N3904RLRETO–922000/Tape & Reel 2N3904RLRMTO–922000/Ammo Pack STYLE 1 Y= Year WW= Work Week MARKING DIAGRAMS 2N 3903 YWW 2N3904RLRPTO–922000/Ammo Pack 2N 3904 YWW 2N3904RL1TO–922000/Tape & Reel 2N3904ZL1TO–922000/Ammo Pack

Specifications