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SILICON PNP EPITAXIALTYPE (PCT PROCESS) 2SA473 POWER AMPLIFIER APPLICATIONS. CAR RADIO AND CAR STEREO OUTPUTSTAGE APPLICATIONS FEATURES : . Good Linearity of hpE. . Complementary to2SC1173. MAXIMUM RATINGS (Ta=25°C) Unit inmm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage v CBO -30 V Collector-EmitterVoltage VCEO -30 V Emitter-BaseVoltage VEBO -5 V Collector Current ic -3 A EmitterCurrent IE 3 A CollectorPower (Tc=25 o c) Dissipation Pc10 W JunctionTemperature T 3 150 °C StorageTemperature Range Tstg -55VL50 °C ELECTRICAL CHARACTERISTICS (Ta=25°c) 10.3 MAX, 3.6 ±0.2 2.542.54 s in d ? bj2-3- 1.BASE 2.COLLECTOR (HEATSINK) 3. EMI TTER JEDEC T0-220AB EIAJ SC-46 TOSHIBA 2-10A1A MountingKitNo. AC75 Weight: 1.9g CHARACTERISTICSYMBOLTEST CONDITIONMIN.TYP.MAX.UNIT CollectorCut-offCurrent ICB0 V C B=-20V, I E =0 -- -1.0 MA EmitterCut-off Current IEBO V E B=-5V, Ic-0 -- -1.0 yA Collector-Emitter Breakdown Voltage V (BR) CEO IC=-10mA,Ib=0 -30 - - V Emitter- Base Breakdown Voltage V(BR)EBO lE=-lmA, lc=0 -5 - - V DC Current Gain hFE(l) (No to) V CE =-2V,I C =-0.5A 70 - 240 h F E (2) VcE=-2V, IC=-2.5A 25 - - Collector-Emitter Saturation Voltage VcE(sat) I C =-2A, I B =-0.2A - -0.3-0.8 V Base-Emitter Voltage VBE VCE=~2V, Ic=-0.5A - -0.75 -1.0 V Transition Frequencyf T V CE =-2V, I C =-0.5A - 100 - MHz Collector Output Capacitance Cob V C B=-10V,lE=0,f=lMHz - 40 - pF Note: hFE(D Classification : 70^140,Y : 120^240 IIMIIIIIIIIfltlltllllllllltllllttlllllltlltlll Itlltll ttlllllllltllltllMirtllMlllltllllllMIMflllllMllflllllMIIIIMIIlllllllltJIIIIIltllllMllllllMIMIIIItlllllMMIlllll itllilllll ~B~ ^^»^^ —BB^^.^^. CORPORATION -143-