Loading PDF...
Pages: 4
Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.POWER MOSFET ▼ ▼▼ ▼ Simple Drive RequirementBV DSS 100V ▼ ▼▼ ▼ Lower On-resistanceR DS(ON) 6.5mΩ ▼ ▼▼ ▼ Fast Switching CharacteristicI D 97A ▼ ▼▼ ▼ RoHS Compliant & Halogen-Free Description Absolute Maximum Ratings SymbolUnits V DS V V GS V I D @T C =25°CA I D @T C =100°CA I DM A P D @T C =25°CW P D @T A =25°CW T STG °C T J °C SymbolValueUnits Rthj-cMaximum Thermal Resistance, Junction-case0.9°C/W Rthj-aMaximum Thermal Resistance, Junction-ambient62°C/W Data and specifications subject to change without notice 201312112 Thermal Data Parameter 1 Operating Junction Temperature Range-55 to 150 Drain Current, V GS @ 10V 61 Pulsed Drain Current 1 360 Storage Temperature Range Total Power Dissipation138 -55 to 150 Gate-Source Voltage+20 Drain Current, V GS @ 10V 97 Total Power Dissipation2 AP92LT10GP-HF Halogen-Free Product ParameterRating Drain-Source Voltage100 G D S AP92LT10series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides thedesigner withan extreme efficient device for use in a wide range ofpower applications. The TO-220 package is widely preferred for all commercial- industrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. G D S TO-220(P)