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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BV DSS 30V ▼ Lower On-resistance R DS(ON) 4mΩ ▼ Fast Switching Characteristics I D 75A ▼ RoHS Compliant & Halogen-Free Description Absolute Maximum Ratings SymbolUnits V DS V V GS V I D @T C =25°CA I D @T C =100°CA I DM A P D @T C =25°CW W/°C T STG °C T J °C SymbolValueUnits Rthj-cMaximum Thermal Resistance, Junction-case1.4°C/W Rthj-a62.5°C/W Rthj-aMaximum Thermal Resistance, Junction-ambient110°C/W Data and specifications subject to change without notice Thermal Data Parameter Storage Temperature Range-55 to 150 Operating Junction Temperature Range-55 to 150 Linear Derating Factor0.71 Pulsed Drain Current 1 300 Total Power Dissipation89 Continuous Drain Current 3 75 Continuous Drain Current50 Drain-Source Voltage30 Gate-Source Voltage+ 20 201106093 1 AP92T03GH/J-HF Halogen-Free Product Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 ParameterRating G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP92T03GJ) are available for low-profile applications. G D S TO-252(H) G D S TO-251(J)