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AP92T03GS/P-HF Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.POWER MOSFET ▼ ▼▼ ▼ Simple Drive RequirementBV DSS 30V ▼ ▼▼ ▼ Lower On-resistanceR DS(ON) 4mΩ ▼ ▼▼ ▼ Fast Switching CharacteristicI D 80A ▼ ▼▼ ▼ RoHS Compliant & Halogen-Free Description Absolute Maximum Ratings@T j =25 o C(unless otherwise specified) SymbolUnits V DS V V GS V I D @T C =25°CA I D @T C =100°CA I DM A P D @T C =25°CW W/°C T STG °C T J °C SymbolValueUnits Rthj-cMaximum Thermal Resistance, Junction-case1.4 °C/W Rthj-a40 °C/W Rthj-aMaixmum Thermal Resistance, Junction-ambient62 °C/W Data and specifications subject to change without notice 201501154 1 Halogen-Free Product Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 ParameterRating Drain-Source Voltage30 Gate-Source Voltage+ 20 Drain Current 3 80 Drain Current50 Pulsed Drain Current 1 320 Total Power Dissipation89 -55 to 150 Operating Junction Temperature Range-55 to 150 Linear Derating Factor0.71 Thermal Data Parameter Storage Temperature Range G D S G D S TO-263(S) G D S TO-220(P) AP92T03series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP92T03GP) are available for low-profile applications.