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AP92T03GS/P-HF Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.POWER MOSFET ▼ Simple Drive Requirement BV DSS 30V ▼ Lower On-resistanceR DS(ON) 4mΩ ▼ Fast Switching CharacteristicI D 80A ▼ RoHS Compliant & Halogen-Free Description Absolute Maximum Ratings SymbolUnits V DS V V GS V I D @T C =25°CA I D @T C =100°CA I DM A P D @T C =25°CW W/°C T STG °C T J °C SymbolValueUnits Rthj-cMaximum Thermal Resistance, Junction-case1.4°C/W Rthj-a40°C/W Rthj-aMaixmum Thermal Resistance, Junction-ambient62°C/W Data and specifications subject to change without notice Thermal Data Parameter Storage Temperature Range-55 to 150 Operating Junction Temperature Range-55 to 150 Linear Derating Factor0.71 Pulsed Drain Current 1 320 Total Power Dissipation89 Continuous Drain Current 3 80 Continuous Drain Current50 Rating Drain-Source Voltage30 Gate-Source Voltage+ 20 201303053 1 Halogen-Free Product Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Parameter G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, lo w on-resistance and cost-effectiveness. The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP92T03GP) are available for low-profile applications. G D S TO-263(S) G D S TO-220(P)