AP92T12GP-HF datasheet pdf

AP92T12GP-HF www.doingter.cn —1 — Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent R DS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) V DS =120V,I D =110A,R DS(ON) <6.5m Ω @V GS =10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra IowR DS(ON) . 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(T J =25°Cunless otherwise noted) G D S SymbolParameterRatingsUnits V DS Drain-Source Voltage120V V GS Gate-Source Voltage ±20 V I D Continuous Drain Current 1 T C =25°C 110A E AS Single Pulse Avalanche Energy 5 400mJ P D Power Dissipation192W T J , T STG Operating and Storage Junction Temperature Range-55-+150 °C Thermal Characteristics： SymbolParameterMaxUnits R ƟJC Thermal Resistance,Junction to Case0.65 °C/W R ƟJA Thermal Resistance,Junction to Ambient 4 62

Specifications