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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.POWER MOSFET ▼ Simple Drive Requirement BV DSS 120V ▼ Lower On-resistanceR DS(ON) 8.5mΩ ▼ RoHS Compliant & Halogen-FreeI D 130A Description Absolute Maximum Ratings SymbolUnits V DS V V GS V I D @T C =25°CA I D @T C =25°CA I D @T C =100°CA I DM A P D @T C =25°CW T STG °C T J °C SymbolValueUnits Rthj-cMaximum Thermal Resistance, Junction-case0.4°C/W Rthj-aMaixmum Thermal Resistance, Junction-ambient62°C/W Data and specifications subject to change without notice Thermal Data Parameter Storage Temperature Range Total Power Dissipation375 -55 to 175 Operating Junction Temperature Range Continuous Drain Current, V GS @ 10V 95 Pulsed Drain Current 1 300 Gate-Source Voltage+ 20 Continuous Drain Current, V GS @ 10V 3 120 Continuous Drain Current (Chip) ParameterRating Drain-Source Voltage120 200912091 1 AP92T12GP-HF Halogen-Free Product -55 to 175 130 G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial through-hole applications. G D S TO-220(P)