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AP92U03GH/J-HF Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.POWER MOSFET ▼ Low On-resistance BV DSS 30V ▼ Simple Drive RequirementR DS(ON) 3.8mΩ ▼ Fast Switching CharacteristicI D 75A ▼ RoHS Compliant & Halogen-Free Description □ Absolute Maximum Ratings SymbolUnits V DS V V GS V I D @T C =25°CA I D @T C =100°CA I DM A P D @T C =25°CW T STG °C T J °C SymbolValueUnits Rthj-cMaximum Thermal Resistance, Junction-case2.5°C/W Rthj-a62.5°C/W Rthj-aMaximum Thermal Resistance, Junction-ambient110°C/W Data & specifications subject to change without notice Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Thermal Data Parameter Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 201204204 1 Total Power Dissipation Gate-Source Voltage+ 20 Continuous Drain Current, V GS @ 10V 4 75 Continuous Drain Current, V GS @ 10V 57 Pulsed Drain Current 1 ParameterRating Drain-Source Voltage30 50 Halogen-Free Product 300 The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP92U03GJ) are available for low-profile applications. G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. G D S TO-251(J) G D S TO-252(H)