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Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.POWER MOSFET ▼ Low On-resistance BV DSS 30V ▼ Simple Drive RequirementR DS(ON) 4.5mΩ ▼ Fast Switching CharacteristicI D 80A ▼ RoHS Compliant & Halogen-Free Description □ Absolute Maximum Ratings SymbolUnits V DS V V GS V I D @T C =25°CA I D @T C =100°CA I DM A P D @T C =25°CW P D @T A =25°CW T STG °C T J °C SymbolValueUnits Rthj-cMaximum Thermal Resistance, Junction-case2.5°C/W Rthj-a62°C/W Data & specifications subject to change without notice Total Power Dissipation2 Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Thermal Data Parameter Maximum Thermal Resistance, Junction-ambient 201012281 1 Total Power Dissipation Gate-Source Voltage+ 20 Continuous Drain Current, V GS @ 10V 3 80 Continuous Drain Current, V GS @ 10V 53 Pulsed Drain Current 1 ParameterRating Drain-Source Voltage30 AP92U03GP-HF 50 Halogen-Free Product 320 The TO-220 package is widly preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters. G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-220(P)