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1 Features •Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) •Fast Read Access Time – 70 ns •Internal Erase/Program Control •Sector Architecture – One 8K Word (16K Bytes) Boot Block with Programming Lockout – Two 4K Word (8K Bytes) Parameter Blocks – One 112K Word (224K Bytes) Main Memory Array Block •Fast Sector Erase Time – 10 Seconds •Byte-by-byte or Word-by-word Programming – 30 μs Typical •Hardware Data Protection •DataPolling for End of Program Detection •Low Power Dissipation – 25mAActiveCurrent – 50 μA CMOS Standby Current •Typical 10,000 Write Cycles Description The AT49BV/LV2048A is a 3-volt, 2-megabit Flash memory organized as 262,144 words of 8 bits each or 128K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than 50 μA. The device contains a user-enabled “boot block” protection feature. The AT49BV/LV2048A locates the boot block at lowest order addresses (“bottom boot”). To allow for simple in-system reprogrammability, the AT49BV/LV2048A does not require high input voltages for programming. Reading data out of the device is similar to reading from an EPROM; it has standard CE ,OEand WEinputs to avoid bus con- tention. Reprogramming the AT49BV/LV2048A is performed by first erasing a block of data and then programming on a byte-by-byte or word-by-word basis. Pin Configurations Pin NameFunction A0 - A16Addresses CE Chip Enable OE Output Enable WE Write Enable RESET Reset VPPVPP can be left unconnected or connected to VCC, GND, 5V or 12V. The input has no effect on the operation of the device. I/O0 - I/O15Data Inputs/Outputs I/O15(A-1)I/O15 (Data Input/Output, Word Mode) A-1 (LSB Address Input, Byte Mode) BYTE Selects Byte or Word Mode NCNo Connect 2-megabit (256K x 8/ 128K x 16) Single 2.7-volt Battery-Voltage ™ Flash Memory AT49BV2048A AT49LV2048A Rev. 1914D–FLASH–03/02