AT49SV322AT datasheet pdf

1 Features •Single Voltage Read/Write Operation: 1.65V to 1.95V •Access Time – 80 ns •Sector Erase Architecture – Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout •Fast Word Program Time – 12 μs •Fast Sector Erase Time – 300 ms •Suspend/Resume Feature for Erase and Program – Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector – Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/Word •Low-power Operation –12 mA Active – 13 μA Standby •Data Polling, Toggle Bit, Ready/Busy for End of Program Detection •VPP Pin for Write Protection •RESET Input for Device Initialization •Sector Lockdown Support •TSOP and CBGA Package Options •Top or Bottom Boot Block Configuration Available •128-bit Protection Register •Minimum 100,000 Erase Cycles •Common Flash Interface (CFI) Description The AT49SV322A(T) is a 1.8-volt 32-megabit Flash memory organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 71 sectors for erase operations. The device is offered in a 48-lead TSOP and a 48-ball CBGA pack- age. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-system programming. Pin Configurations Pin NameFunction A0 - A20Addresses CE Chip Enable OE Output Enable WE Write Enable RESET Reset RDY/BUSY READY/BUSY Output VPPWrite Protection I/O0 - I/O14Data Inputs/Outputs I/O15 (A-1)I/O15 (Data Input/Output, Word Mode) A-1 (LSB Address Input, Byte Mode) BYTE Selects Byte or Word Mode NCNo Connect 32-megabit (2M x 16/4M x 8) 1.8-volt Only Flash Memory AT49SV322A AT49SV322AT Rev. 3360C–FLASH–3/04

Features

• •Single Voltage Read/Write Operation: 1.65V to 1.95V
• •Access Time – 80 ns
• •Sector Erase Architecture
• •Fast Word Program Time – 12 μs
• •Fast Sector Erase Time – 300 ms
• •Suspend/Resume Feature for Erase and Program
• •Low-power Operation
• •Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
• •VPP Pin for Write Protection
• •RESET Input for Device Initialization
• •Sector Lockdown Support
• •TSOP and CBGA Package Options
• •Top or Bottom Boot Block Configuration Available
• •128-bit Protection Register
• •Minimum 100,000 Erase Cycles
• •Common Flash Interface (CFI)
• - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 71 sectors for
• 1.8-volt Only