AT875LTS44 datasheet pdf

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AT875LTS44 datasheet pdf

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PHASE CONTROL THYRISTORAT875LT Repetitive voltage up to4400V Mean on-state current2200A Surge current25.2kA FINAL SPECIFICATION apr 97 - ISSUE : 01 SymbolCharacteristicConditions Tj [°C] ValueUnit BLOCKING VRRMRepetitive peak reverse voltage1204400V VRSMNon-repetitive peak reverse voltage1204500V VDRMRepetitive peak off-state voltage1204400V IRRMRepetitive peak reverse currentV=VRRM120200mA IDRMRepetitive peak off-state currentV=VDRM120200mA CONDUCTING IT (AV)Mean on-state current180° sin, 50 Hz, Th=55°C, double side cooled2200A IT (AV)Mean on-state current180° sin, 50 Hz, Tc=85°C, double side cooled1720A ITSMSurge on-state currentsine wave, 10 ms12025.2kA I² tI² twithout reverse voltage3175x1E3A²s VTOn-state voltageOn-state current = 2000A252V VT(TO)Threshold voltage1201.3V rTOn-state slope resistance1200.334mohm SWITCHING di/dtCritical rate of rise of on-state current, min. From 75% VDRM up to 1600 A, gate 10V 5ohm 120200A/μs dv/dtCritical rate of rise of off-state voltage, min.Linear ramp up to 70% of VDRM1201000V/μs tdGate controlled delay time, typicalVD=100V, gate source 40V, 10 ohm , tr=.5 μs253μs tqCircuit commutated turn-off time, typicaldV/dt = 20 V/μs linear up to 75% VDRM400μs QrrReverse recovery chargedi/dt=-20 A/μs, I= 1050 A120μC IrrPeak reverse recovery currentVR= 50 VA IHHolding current, typicalVD=5V, gate open circuit25300mA ILLatching current, typicalVD=12V, tp=30μs251000mA GATE VGTGate trigger voltageVD=12V253.5V IGTGate trigger currentVD=12V25400mA VGDNon-trigger gate voltage, min.VD=2000 V1200.8V VFGMPeak gate voltage (forward) 30V IFGMPeak gate current 10A VRGMPeak gate voltage (reverse) 10V PGMPeak gate power dissipationPulse width 100 μs 150W PGAverage gate power dissipation 2W MOUNTING Rth(j-h)Thermal impedance, DCJunction to heatsink, double side cooled9.5°C/kW Rth(c-h)Thermal impedanceCase to heatsink, double side cooled2°C/kW TjOperating junction temperature -30 /120°C FMounting force40.0 /50.0kN Mass1150g ORDERING INFORMATION : AT875LT S 44 standard specification VDRM&VRRM/100 Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori

Specifications
PHASE CONTROL THYRISTORAT875LT Repetitive voltage up to4400V Mean on-state current2200A Surge current25.2kA FINAL SPECIFICATION apr 97 - ISSUE : 01 SymbolCharacteristicConditions Tj [°C] ValueUnit BLOCKING VRRMRepetitive peak reverse voltage1204400V VRSMNon-repetitive peak reverse voltage1204500V VDRMRepetitive peak off-state voltage1204400V IRRMRepetitive peak reverse currentV=VRRM120200mA IDRMRepetitive peak off-state currentV=VDRM120200mA CONDUCTING IT (AV)Mean on-state current180° sin, 50 Hz, Th=55°C, double side cooled2200A IT (AV)Mean on-state current180° sin, 50 Hz, Tc=85°C, double side cooled1720A ITSMSurge on-state currentsine wave, 10 ms12025.2kA I² tI² twithout reverse voltage3175x1E3A²s VTOn-state voltageOn-state current = 2000A252V VT(TO)Threshold voltage1201.3V rTOn-state slope resistance1200.334mohm SWITCHING di/dtCritical rate of rise of on-state current, min. From 75% VDRM up to 1600 A, gate 10V 5ohm 120200A/μs dv/dtCritical rate of rise of off-state voltage, min.Linear ramp up to 70% of VDRM1201000V/μs tdGate controlled delay time, typicalVD=100V, gate source 40V, 10 ohm , tr=.5 μs253μs tqCircuit commutated turn-off time, typicaldV/dt = 20 V/μs linear up to 75% VDRM400μs QrrReverse recovery chargedi/dt=-20 A/μs, I= 1050 A120μC IrrPeak reverse recovery currentVR= 50 VA IHHolding current, typicalVD=5V, gate open circuit25300mA ILLatching current, typicalVD=12V, tp=30μs251000mA GATE VGTGate trigger voltageVD=12V253.5V IGTGate trigger currentVD=12V25400mA VGDNon-trigger gate voltage, min.VD=2000 V1200.8V VFGMPeak gate voltage (forward) 30V IFGMPeak gate current 10A VRGMPeak gate voltage (reverse) 10V PGMPeak gate power dissipationPulse width 100 μs 150W PGAverage gate power dissipation 2W MOUNTING Rth(j-h)Thermal impedance, DCJunction to heatsink, double side cooled9.5°C/kW Rth(c-h)Thermal impedanceCase to heatsink, double side cooled2°C/kW TjOperating junction temperature -30 /120°C FMounting force40.0 /50.0kN Mass1150g ORDERING INFORMATION : AT875LT S 44 standard specification VDRM&VRRM/100 Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori