© Semiconductor Components Industries, LLC, 2000
November, 2019 − Rev. 1
1Publication Order Number:
BD136/D
PNP Epitaxial Silicon
Transistor
BD136 Series
BD136 / BD138 / BD140
Applications
•Complement to BD135, BD137 and BD139 Respectively
•These are Pb−Free Devices
ABSOLUTE MAXIMUM RATINGS (T
C
Specifications
= 25°C unless otherwise noted)
Rating
SymbolMaxUnit
Collector−Base Voltage
BD136
BD138
BD140
V
CBO
−45
−60
−80
V
Collector−Emitter Voltage
BD136
BD138
BD140
V
CEO
−45
−60
−80
V
Emitter−Base VoltageV
EBO
−5V
Collector Current (DC)I
C
−1.5A
Collector Current (Pulse)I
CP
−3.0A
Base CurrentI
B
−0.5A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
RatingSymbolMaxUnit
Collector DissipationP
C
12.5W
Collector Dissipation (T
A
= 25°C)P
C
1.25W
Junction TemperatureT
J
150°C
Storage Temperature RangeT
STG
−55~150°C
www.onsemi.com
TO−126
CASE 340AS
MARKING DIAGRAM
Y= Year
WW= Work Week
BD1XX = Specific Device Code
XX= 36, 38, 40
1
2
3
BD1XX
Device
Package
Shipping
ORDERING INFORMATION
BD13610STU
BD13610S
BD13616STU
TO−126
60 Units/ Tube
(Pb−Free)
YWW
1
2
3
Emitter
Collector
Base
BD13616S
BD13810STU
BD13816STU
BD14010STU
BD14016STU
BD14016S
500 Units/ Bulk Box
60 Units/ Tube
500 Units/ Bulk Box
60 Units/ Tube
60 Units/ Tube
60 Units/ Tube
60 Units/ Tube
500 Units/ Bulk Box