BD159 (1) datasheet pdf

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Datasheet Information

Pages: 4

V EBO Emitter-Base Voltage 5V

I C Collector Current (DC) 0.5A

I CP *Collector Current (Pulse) 1.0A

I B Base Current0.25A

I C = 1mA, I B = 0250 300 350 V V V I CBO Collector Cut-off Current : BD157 : BD158 : BD159 V CB = 275V, I E = 0 V CB = 325V, I E = 0 V CB = 375V, I E = 0 100 100 100 μA μA μA

I EBO Emitter Cut-off Current V EB = 5V, I C = 0100μA

Specifications

©2001 Fairchild Semiconductor CorporationRev. A1, June 2001 BD157/158/159 NPN Epitxial Silicon Transistor Absolute Maximum Ratings T C =25°C unless otherwise noted Electrical Characteristics T C =25°C unless otherwise noted * Pulse Test: PW=300μs, duty Cycle=1.5% Pulsed SymbolParameterValueUnits V CBO Collector-Base Voltage : BD157 : BD158 : BD159 275 325 375 V V V V CEO Collector-Emitter Voltage : BD157 : BD158 : BD159 250 300 350 V V V

P C Collector Dissipation (T C =25°C) 20W T J Junction Temperature 50°C T STG Storage Temperature- 65 ~ 150°C SymbolParameterTest ConditionMin.Typ.Max.Units BV CEO *Collector-Emitter Breakdown Voltage : BD157 : BD158 : BD159

BD159 (1) datasheet pdf