BD175 datasheet pdf

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BD175 datasheet pdf

Datasheet Information

Pages: 4

V EBO Emitter-Base Voltage 5V

I C Collector Current (DC) 3A

Specifications
©2000 Fairchild Semiconductor InternationalRev. A, February 2000 BD175/177/179 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25°C unless otherwise noted Electrical Characteristics T C =25°C unless otherwise noted * Pulse Test: PW=300μs, duty Cycle=1.5% Pulsed h FE Classificntion * Classification 16: Only BD175 SymbolParameterValueUnits V CBO *Collector-Base Voltage : BD175 : BD177 : BD179 45 60 80 V V V V CEO Collector-Emitter Voltage : BD175 : BD177 : BD179 45 60 80 V V V

I CP *Collector Current (Pulse) 7A P C Collector Dissipation (T C =25°C) 30W T J Junction Temperature150°C T STG Storage Temperature- 65 ~ 150°C SymbolParameterTest ConditionMin.Typ.Max.Units V CEO (sus)* Collector-Emitter Sustaining Voltage : BD175 : BD177 : BD179 I C = 100mA, I B = 045 60 80 V V V I CBO Collector Cut-off Current : BD175 : BD177 : BD179 V CB = 45V, I E = 0 V CB = 60V, I E = 0 V CB = 80V, I E = 0 100 100 100 μA μA μA I EBO Emitter Cut-off Current V EB = 5V, I C = 0 1mA h FE1 h FE2 * DC Current Gain V CE = 2V, I C = 150mA V CE = 2V, I C = 1A 40 15 250 V CE (sat)* Collector-Emitter Saturation Voltage I C = 1A, I B = 0.1A0.8V V BE (on)* Base-Emitter On Voltage V CE = 2V, I C = 1A1.3V f T Current Gain Bandwidth Product V CE = 10V, I C = 250mA 3MHz Classification61016 h FE1 40 ~ 10063 ~ 160100 ~ 250 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively 1 TO-126 1. Emitter 2.Collector 3.Base