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© Semiconductor Components Industries, LLC, 2007 July, 2007 - Rev. 12 1Publication Order Number: BD179/D BD179 Plastic Medium-Power NPN Silicon Transistor This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features •DC Current Gain - h FE = 40 (Min) @ I C = 0.15 Adc •BD179 is complementary with BD180 •Pb-Free Package is Available* MAXIMUM RATINGS RatingSymbolValueUnit Collector-Emitter VoltageV CEO 80Vdc Collector-Base VoltageV CBO 80Vdc Emitter-Base VoltageV EBO 5.0Vdc Collector CurrentI C 3.0Adc Base CurrentI B 1.0Adc Total Power Dissipation @ T C = 25_C Derate above 25_C P D 30 240 W mW/_C Operating and Storage Junction Temperature Range T J , T stg –65 to +150 _C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction-to-Case q JC 4.16 _C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DevicePackageShipping ORDERING INFORMATION BD179TO-225500 Units/Box 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS, 30 WATTS http://onsemi.com BD179G TO-225 (Pb-Free) 500 Units/Box TO-225 CASE 77 STYLE 1 2 1 3 MARKING DIAGRAM YWW BD179G Y= Year WW= Work Week BD179 = Device Code G= Pb-Free Package