BD234 (1) datasheet pdf

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BD234 (1) datasheet pdf

Datasheet Information

Pages: 4

V CER Collector-Emitter Voltage : BD234 : BD236 : BD238 - 45 - 60 - 100 V V V

V EBO Emitter-Base Voltage - 5V

I C Collector Current (DC) - 2A

V CB = - 45V, I E = 0 V CB = - 60V, I E = 0 V CB = - 100V, I E = 0 - 100 - 100 - 100 μA μA μA

I EBO Emitter Cut-off Current V EB = - 5V, I C = 0 - 1mA

h FE * DC Current Gain V CE = - 2V, I C = - 150mA V CE = - 2V, I C = - 1A 40 25

Specifications
©2000 Fairchild Semiconductor InternationalRev. A, February 2000 BD234/236/238 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25°C unless otherwise noted Electrical Characteristics T C =25°C unless otherwise noted * Pulse Test: PW=300μs, duty Cycle=1.5% Pulsed SymbolParameterValueUnits V CBO Collector-Base Voltage : BD234 : BD236 : BD238 - 45 - 60 - 100 V V V V CEO Collector-Emitter Voltage : BD234 : BD236 : BD238 - 45 - 60 - 80 V V V

I CP *Collector Current (Pulse) - 6A P C Collector Dissipation (T C =25°C) 25W T J Junction Temperature 150°C T STG Storage Temperature- 65 ~ 150°C SymbolParameterTest ConditionMin.Typ.Max.Units V CEO (sus)* Collector-Emitter Sustaining Voltage : BD234 : BD236 : BD238 I C = - 100mA, I B = 0- 45 - 60 - 80 V V V I CBO Collector Cut-off Current : BD234 : BD236 : BD238