BD236 datasheet pdf

BD236 datasheet pdf PDF Viewer

Loading PDF...

BD236 datasheet pdf

Datasheet Information

Pages: 5

BD235/BD236 BD237/BD238 COMPLEMENTARY SILICON POWER TRANSISTORS nSGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. The complementary PNP types are BD236 and BD238 respectively. INTERNAL SCHEMATIC DIAGRAM September 1997 ABSOLUTE MAXIMUM RATINGS SymbolParameterValueUnit NPNBD235BD237 PNPBD236BD238 V CBO Collector-Base Voltage (I E =0)60100V V CER Collector-Base Voltage (R BE =1KΩ)60100V V CEO Collector-Emitter Voltage (I B =0)6080V V EBO Emitter-Base Voltage (I C =0)5V I C Collector Current2A I CM Collector Peak Current6A P tot Total Dissipation at T c =25 o C25W T stg Storage Temperature-65 to 150 o C T j Max. Operating Junction Temperature150 o C For PNP types voltage and current values are negative. 3 2 1 SOT-32 1/5

Specifications
BD235/BD236 BD237/BD238 COMPLEMENTARY SILICON POWER TRANSISTORS nSGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. The complementary PNP types are BD236 and BD238 respectively. INTERNAL SCHEMATIC DIAGRAM September 1997 ABSOLUTE MAXIMUM RATINGS SymbolParameterValueUnit NPNBD235BD237 PNPBD236BD238 V CBO Collector-Base Voltage (I E =0)60100V V CER Collector-Base Voltage (R BE =1KΩ)60100V V CEO Collector-Emitter Voltage (I B =0)6080V V EBO Emitter-Base Voltage (I C =0)5V I C Collector Current2A I CM Collector Peak Current6A P tot Total Dissipation at T c =25 o C25W T stg Storage Temperature-65 to 150 o C T j Max. Operating Junction Temperature150 o C For PNP types voltage and current values are negative. 3 2 1 SOT-32 1/5