BD237 (2) datasheet pdf

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Datasheet Information

Pages: 4

: BD233 : BD235 : BD237 45 60 80 V V V

: BD233 : BD235 : BD237 45 60 100 V V V V CEO Collector-Emitter Voltage

V CER Collector-Emitter Voltage

: BD233 : BD235 : BD237 45 60 100 V V V

V EBO Emitter-Base Voltage 5V

I C Collector Current (DC) 2A

I C = 100mA, I B = 045 60 80 V V V I CBO Collector Cut-off Current : BD233 : BD235 : BD237

Specifications

©2001 Fairchild Semiconductor CorporationRev. A1, June 2001 BD233/235/237 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25°C unless otherwise noted Electrical Characteristics T C =25°C unless otherwise noted * Pulse Test: PW=300μs, duty Cycle=1.5% Pulsed SymbolParameterValueUnits V CBO Collector-Base Voltage

I CP *Collector Current (Pulse) 6A P C Collector Dissipation (T C =25°C) 25W T J Junction Temperature150°C T STG Storage Temperature- 65 ~ 150°C SymbolParameterTest ConditionMin.Typ.Max.Units V CEO (sus)* Collector-Emitter Sustaining Voltage : BD233 : BD235 : BD237

BD237 (2) datasheet pdf