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BD239D, BD239E, BD239F NPN SILICON POWER TRANSISTORS PRODUCT INFORMATION 1 SEPTEMBER 1981 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. l30 W at 25°C Case Temperature l2 A Continuous Collector Current l4 A Peak Collector Current lCustomer-Specified Selections Available B C E TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA 1 2 3 absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES:1.This value applies for t p ≤ 0.3 ms, duty cycle ≤ 10%. 2.Derate linearly to 150°C case temperature at the rate of 0.24 W/°C. 3.Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. 4.This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I B(on) = 0.4 A, R BE = 100 Ω, V BE(off) = 0, R S = 0.1 Ω, V CC = 20 V. RATINGSYMBOLVALUEUNIT Collector-emitter voltage (R BE = 100 Ω) BD239D BD239E BD239F V CER 160 180 200 V Collector-emitter voltage (I B = 0) BD239D BD239E BD239F V CEO 120 140 160 V Emitter-base voltageV EBO 5V Continuous collector currentI C 2A Peak collector current (see Note 1)I CM 4A Continuous base currentI B 0.6A Continuous device dissipation at (or below) 25°C case temperature (see Note 2)P tot 30W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)P tot 2W Unclamped inductive load energy (see Note 4)½LI C 2 32mJ Operating junction temperature rangeT j -65 to +150°C Storage temperature rangeT stg -65 to +150°C Lead temperature 3.2 mm from case for 10 secondsT L 250°C