BD241C (1) datasheet pdf

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BD241C (1) datasheet pdf

Datasheet Information

Pages: 3

I CP *Collector Current (Pulse) 5A

45 60 80 100 V V V V I CEO Collector Cut-off Current : BD241/A : BD241B/C V CE = 30V, I B = 0 V CE = 60V, I B = 0 0.3 0.3 mA mA

I CES Collector Cut-off Current : BD241 : BD241A : BD241B : BD241C V CE = 45V, V BE = 0 V CE = 60V, V BE = 0 V CE = 80V, V BE = 0 V CE = 100V, V BE = 0 0.2 0.2 0.2 0.2 mA mA mA mA

Specifications

©2000 Fairchild Semiconductor InternationalRev. A, February 2000 BD241/A/B/C NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25°C unless otherwise noted Electrical Characteristics T C =25°C unless otherwise noted * Pulse Test: PW=350μs, duty Cycle≤2% Pulsed SymbolParameterValueUnits V CEO Collector-Emitter Voltage : BD241 : BD241A : BD241B : BD241C 45 60 80 100 V V V V V CER Collector-Emitter Voltage : BD241 : BD241A : BD241B : BD241C 55 70 90 115 V V V V V EBO Emitter-Base Voltage 5V I C Collector Current (DC) 3A

I B Base Current 1A P C Collector Dissipation (T C =25°C) 40W T J Junction Temperature150°C T STG Storage Temperature- 65 ~ 150°C SymbolParameterTest ConditionMin.Typ.Max.Units V CEO (sus) * Collector-Emitter Sustaining Voltage : BD241 : BD241A : BD241B : BD241C I C = - 30mA, I B = 0

BD241C (1) datasheet pdf