BD242 datasheet pdf

©2000 Fairchild Semiconductor InternationalRev. A, February 2000 BD242/A/B/C PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25°C unless otherwise noted Electrical Characteristics T C =25°C unless otherwise noted * Pulse Test: PW=300μs, duty Cycle≤2% Pulsed SymbolParameterValueUnits V CEO Collector-Emitter Voltage : BD242 : BD242A : BD242B : BD242C - 45 - 60 - 80 - 100 V V V V V CER Collector-Emitter Voltage : BD242 : BD242A : BD242B : BD242C - 55 - 70 - 90 - 115 V V V V V EBO Emitter-Base Voltage - 5V I C Collector Current (DC) - 3A I CP *Collector Current (Pulse) - 5A I B Base Current - 1A P C Collector Dissipation (T C =25°C) 40W T J Junction Temperature 150°C T STG Storage Temperature- 65 ~ 150°C SymbolParameterTest ConditionMin.Typ.Max.Units V CEO (sus) * Collector-Emitter Sustaining Voltage : BD242 : BD242A : BD242B : BD242C I C = - 30mA, I B = 0 - 45 - 60 - 80 - 100 V V V V I CEO Collector Cut-off Current : BD242/A : BD242B/C V CE = - 30V, I B = 0 V CE = - 60V, I B = 0 - 0.3 - 0.3 mA mA