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BD241BFP BD242BFP COMPLEMENTARY SILICON POWER TRANSISTORS nSGS-THOMSON PREFERRED SALESTYPES nCOMPLEMENTARY PNP - NPN DEVICES nFULLY MOLDED ISOLATED PACKAGE n2000 V DC ISOLATION (U.L. COMPLIANT) APPLICATIONS nGENERAL PURPOSE SWITCHING nGENERAL PURPOSE AMPLIFIERS DESCRIPTION The BD241BFP is silicon epitaxial-base NPN transistors mounted in TO-220FP fully molded isolated package. It is inteded for power linear and switching applications. The complementary PNP types is the BD242BFP. INTERNAL SCHEMATIC DIAGRAM April 1998 ABSOLUTE MAXIMUM RATINGS SymbolParameterValueUnit NPNBD241BFP PNPBD242BFP V CER Collector-Base Voltage (R BE =100Ω)90V V CEO Collector-Emitter Voltage (I B =0)80V V EBO Emitter-Base Voltage (I C =0)5V I C Collector Current3A I CM Collector Peak Current5A I B Bas e Curr ent1A P tot Total Dissipation at T c ≤25 o C24W T stg Storage Temperature-65 to 150 o C T j Max. Operating Junction Temperature150 o C For PNP types voltage and current values are negative. 1 2 3 TO-220FP 1/4