I
EBO
Emitter Cut-off Current V
EB
= - 5V, I
C
= 0 - 1mA
I
CES
Collector Cut-off Current : BD242
: BD242A
: BD242B
: BD242C
V
CE
= - 45V, V
BE
= 0
V
CE
= - 60V, V
BE
= 0
V
CE
= - 80V, V
BE
= 0
V
CE
= - 100V, V
BE
= 0
- 0.2
- 0.2
- 0.2
- 0.2
mA
mA
mA
mA
h
FE
* DC Current Gain V
CE
= - 4V, I
C
= - 1A
V
CE
= - 4V, I
C
= - 3A
25
10
Specifications
©2000 Fairchild Semiconductor InternationalRev. A, February 2000
BD242/A/B/C
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW=300μs, duty Cycle≤2% Pulsed
SymbolParameterValueUnits
V
CEO
Collector-Emitter Voltage
: BD242
: BD242A
: BD242B
: BD242C
- 45
- 60
- 80
- 100
V
V
V
V
V
CER
Collector-Emitter Voltage
: BD242
: BD242A
: BD242B
: BD242C
- 55
- 70
- 90
- 115
V
V
V
V
V
EBO
Emitter-Base Voltage - 5V
I
C
Collector Current (DC) - 3A
I
CP
*Collector Current (Pulse) - 5A
I
B
Base Current - 1A
P
C
Collector Dissipation (T
C
=25°C) 40W
T
J
Junction Temperature 150°C
T
STG
Storage Temperature- 65 ~ 150°C
SymbolParameterTest ConditionMin.Typ.Max.Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: BD242
: BD242A
: BD242B
: BD242C
I
C
= - 30mA, I
B
= 0 - 45
- 60
- 80
- 100
V
V
V
V
I
CEO
Collector Cut-off Current : BD242/A
: BD242B/C
V
CE
= - 30V, I
B
= 0
V
CE
= - 60V, I
B
= 0
- 0.3
- 0.3
mA
mA