BD243A datasheet pdf

BD243A datasheet pdf PDF Viewer

Loading PDF...

BD243A datasheet pdf

Datasheet Information

Pages: 4

V EBO Emitter-Base Voltage 5V

I C Collector Current (DC) 6A

I CP *Collector Current (Pulse) 10A

45 60 80 100 V V V V I CEO Collector Cut-off Current : BD243/243A : BD243B/243C V CE = 30V, I B = 0 V CE = 60V, I B = 0 0.7 0.7 mA mA I CES Collector Cut-off Current : BD243 : BD243A : BD243B : BD243C V CE = 45V, V BE = 0 V CE = 60V, V BE = 0 V CE = 80V, V BE = 0 V CE = 100V, V BE = 0 0.4 0.4 0.4 0.4 mA mA mA mA I EBO Emitter Cut-off Current V EB = 5V, I C = 0 1mA h FE *DC Current Gain V CE = 4V, I C = 0.3A V CE = 4V, I C = 3A 30 15 V CE (sat) *Collector-Emitter Saturation Voltage I C = 6A, I B = 1A1.5V V BE (on) *Base-Emitter ON Voltage V CE = 4V, I C = 6A2V BD243/A/B/C Medium Power Linear and Switching Applications • Complement to BD244, BD244A, BD244B and BD244C respectively 1.Base 2.Collector 3.Emitter 1 TO-220

Specifications
©2000 Fairchild Semiconductor InternationalRev. A, February 2000 BD243/A/B/C NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25°C unless otherwise noted Electrical Characteristics T C =25°C unless otherwise noted * Pulse Test :PW=300μs, duty Cycle<20% Pulsed SymbolParameterValueUnits V CBO Collector-Base Voltage : BD243 : BD243A : BD243B : BD243C 45 60 80 100 V V V V V CEO Collector-Emitter Voltage : BD243 : BD243A : BD243B : BD243C 45 60 80 100 V V V V

I B Base Current 2A P C Collector Dissipation (T C =25°C) 65W T J Junction Temperature150°C T STG Storage Temperature- 65 ~ 150°C SymbolParameterTest ConditionMin.Typ.Max.Units V CEO (sus) * Collector-Emitter Sustaining Voltage : BD243 : BD243A : BD243B : BD243C I C =30mA, I B =0