Loading PDF...
Pages: 4
BD243B/BD243C BD244B/BD244C COMPLEMENTARY SILICON POWER TRANSISTORS nSTMicroelectronics PREFERRED SALESTYPES DESCRIPTION TheBD243BandBD243Caresilicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD244B and BD244C respectively. INTERNAL SCHEMATIC DIAGRAM September 1999 ABSOLUTE MAXIMUM RATINGS SymbolParameterVal ueUni t NPNBD243BBD243C PNPBD244BBD244C V CBO Collector-Base Voltage (I E =0)80100V V CEO Collector-Emitter Voltage (I B =0)80100V V EBO Emitter-Base Voltage (I C =0)5V I C Collector Current6A I CM Collector Peak Current10A I B Base Current2A P tot Total Dissipation at T c ≤25 o C 65W T stg Storage Temperature-65 to 150 o C T j Max. Operating Junction Temperature150 o C For PNP types voltage and current values are negative. 1 2 3 TO-220 1/4