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BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS PRODUCT INFORMATION 1 JUNE 1973 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. lDesigned for Complementary Use with the BD243 Series l65 W at 25°C Case Temperature l6 A Continuous Collector Current l10 A Peak Collector Current lCustomer-Specified Selections Available B C E TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA 1 2 3 absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES:1.This value applies for t p ≤ 0.3 ms, duty cycle ≤ 10%. 2.Derate linearly to 150°C case temperature at the rate of 0.52 W/°C. 3.Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. 4.This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I B(on) = -0.4 A, R BE = 100 Ω, V BE(off) = 0, R S = 0.1 Ω, V CC = -20 V. RATINGSYMBOLVALUEUNIT Collector-emitter voltage (R BE = 100 Ω) BD244 BD244A BD244B BD244C V CER -55 -70 -90 -115 V Collector-emitter voltage (I C = -30 mA) BD244 BD244A BD244B BD244C V CEO -45 -60 -80 -100 V Emitter-base voltageV EBO -5V Continuous collector currentI C -6A Peak collector current (see Note 1)I CM -10A Continuous base currentI B -3A Continuous device dissipation at (or below) 25°C case temperature (see Note 2)P tot 65W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)P tot 2W Unclamped inductive load energy (see Note 4)½LI C 2 62.5mJ Operating junction temperature rangeT j -65 to +150°C Storage temperature rangeT stg -65 to +150°C Lead temperature 3.2 mm from case for 10 secondsT L 250°C