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BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS PRODUCT INFORMATION 1 JUNE 1973 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. lDesigned for Complementary Use with the BD249 Series l125 W at 25°C Case Temperature l25 A Continuous Collector Current l40 A Peak Collector Current lCustomer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRAA B C E 1 2 3 absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES:1.This value applies for t p ≤ 0.3 ms, duty cycle ≤ 10%. 2.Derate linearly to 150°C case temperature at the rate of 1 W/°C. 3.Derate linearly to 150°C free air temperature at the rate of 24 mW/°C. 4.This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I B(on) = -0.4 A, R BE = 100 Ω, V BE(off) = 0, R S = 0.1 Ω, V CC = -20 V. RATINGSYMBOLVALUEUNIT Collector-emitter voltage (R BE = 100 Ω) BD250 BD250A BD250B BD250C V CER -55 -70 -90 -115 V Collector-emitter voltage (I C = -30 mA) BD250 BD250A BD250B BD250C V CEO -45 -60 -80 -100 V Emitter-base voltageV EBO -5V Continuous collector currentI C -25A Peak collector current (see Note 1)I CM -40A Continuous base currentI B -5A Continuous device dissipation at (or below) 25°C case temperature (see Note 2)P tot 125W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)P tot 3W Unclamped inductive load energy (see Note 4)½LI C 2 90mJ Operating junction temperature rangeT j -65 to +150°C Storage temperature rangeT stg -65 to +150°C Lead temperature 3.2 mm from case for 10 secondsT L 250°C