BD336 datasheet pdf

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BD336 datasheet pdf

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BD336 SILICON PNP POWER DARLINGTON TRANSISTOR nSGS-THOMSON PREFERRED SALESTYPE nPNP DARLINGTON nINTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS nGENERAL PURPOSE SWITCHING nGENERAL PURPOSE AMPLIFIERS DESCRIPTION The BD336 is a silicon epitaxial-base PNP transistor in Darlingon configuration mounted in SOT-82 plastic package. It is inteded for use in audio output stages general amplifier and switching applications. INTERNAL SCHEMATIC DIAGRAM July 1997 ABSOLUTE MAXIMUM RATINGS SymbolParameterValueUnit V CBO Collector-Base Voltage (I E = 0)-100V V CEO Collector-Emitter Voltage (I B = 0)-100V V EBO Emitter-Base Voltage (I C = 0)-5V I C Collector Current-6A I CM Collector Peak Current (t p < 10ms)-10A I B Base Current-0.15A P tot Total Dissipation at T c ≤ 25 o C60W T stg Storage Temperature-65 to 150 o C T j Max. Operating Junction Temperature150 o C 1 2 3 SOT-82 1/4

Specifications
BD336 SILICON PNP POWER DARLINGTON TRANSISTOR nSGS-THOMSON PREFERRED SALESTYPE nPNP DARLINGTON nINTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS nGENERAL PURPOSE SWITCHING nGENERAL PURPOSE AMPLIFIERS DESCRIPTION The BD336 is a silicon epitaxial-base PNP transistor in Darlingon configuration mounted in SOT-82 plastic package. It is inteded for use in audio output stages general amplifier and switching applications. INTERNAL SCHEMATIC DIAGRAM July 1997 ABSOLUTE MAXIMUM RATINGS SymbolParameterValueUnit V CBO Collector-Base Voltage (I E = 0)-100V V CEO Collector-Emitter Voltage (I B = 0)-100V V EBO Emitter-Base Voltage (I C = 0)-5V I C Collector Current-6A I CM Collector Peak Current (t p < 10ms)-10A I B Base Current-0.15A P tot Total Dissipation at T c ≤ 25 o C60W T stg Storage Temperature-65 to 150 o C T j Max. Operating Junction Temperature150 o C 1 2 3 SOT-82 1/4