BD379 datasheet pdf

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Datasheet Information

Pages: 4

I CP *Collector Current (Pulse) 3A

I B Base Current 1A P C Collector Dissipation (T C =25°C) 25W

I C = 100mA, I B = 0 45 60 80 V V V

BV CBO Collector-Base : BD375 Breakdown Voltage : BD377 : BD379 I C = 100μA, I E = 0 50 75 100 V V V

I CBO Collector Cut-off Current : BD375 : BD377 : BD379 V CB = 45V, I E = 0 V CB = 60V, I E = 0 V CB = 80V, I E = 0 2 2 2 μA μA μA

Specifications

©2000 Fairchild Semiconductor InternationalRev. A, February 2000 BD375/377/379 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25°C unless otherwise noted Electrical Characteristics T C =25°C unless otherwise noted * Pulse Test: PW=350μs, duty Cycle=2% Pulsed h FE Classification SymbolParameterValueUnits V CBO Collector-Base Voltage : BD375 : BD377 : BD379 50 75 100 V V V V CEO Collector-Emitter Voltage : BD375 : BD377 : BD379 45 60 80 V V V V EBO Emitter-Base Voltage 5V I C Collector Current (DC) 2A

T J Junction Temperature150°C T STG Storage Temperature- 55 ~ 150°C SymbolParameterTest ConditionMin.Typ.Max.Units V CEO (sus)* Collector-Emitter Sustaining Voltage : BD375 : BD377 : BD379

BD379 datasheet pdf