BD380 datasheet pdf

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BD380 datasheet pdf

Datasheet Information

Pages: 4

V EBO Emitter-Base Voltage - 5V

I C Collector Current (DC) - 2A

I CP *Collector Current (Pulse) - 3A

Collector Cut-off Current : BD376 : BD378 : BD380 V CB = - 45V, I E = 0 V CB = - 60V, I E = 0 V CB = - 80V, I E = 0 - 2 - 2 - 2 μA μA μA I EBO Emitter Cut-off Current V EB = - 5V, I C = 0- 100μA h FE1 h FE2 *DC Current Gain V CE = - 2V, I C = - 0.15A V CE = - 2V, I C = - 1A 40 20 375 V CE (sat)*Collector-Emitter Saturation Voltage I C = - 1A, I B = - 0.1A - 1V V BE (on)*Base-Emitter ON Voltage V CE = - 2V, I C = -1A - 1.5V t ON Turn ON Time V CC = - 30V, I C = - 0.5A I B1 = - I B2 = - 0.05A R L = 60Ω 50ns t OFF Turn OFF Time500ns Classification6 101625 h FE1 40 ~ 10063 ~ 160100 ~ 250150 ~ 375 BD376/378/380 Medium Power Linear and Switching Applications • Complement to BD375, BD377 and BD379 respectively 1 TO-126 1. Emitter 2.Collector 3.Base

Specifications
©2000 Fairchild Semiconductor InternationalRev. A, February 2000 BD376/378/380 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25°C unless otherwise noted Electrical Characteristics T C =25°C unless otherwise noted * Pulse Test: PW=350μs, duty Cycle=2% Pulsed h FE Classificntion SymbolParameterValueUnits V CBO Collector-Base Voltage : BD376 : BD378 : BD380 - 50 - 75 - 100 V V V V CEO Collector-Emitter Voltage : BD376 : BD378 : BD380 - 45 - 60 - 80 V V V

I B Base Current - 1A P C Collector Dissipation (T C =25°C) 25W T J Junction Temperature 150°C T STG Storage Temperature- 55 ~ 150°C SymbolParameterTest ConditionMin.Typ.Max.Units V CEO (sus)*Collector-Emitter Sustaining Voltage : BD376 : BD378 : BD380 I C = - 100mA, I B = 0 - 45 - 60 - 80 V V V BV CBO Collector-Base : BD376 Breakdown Voltage : BD378 : BD380 I C = - 100μA, I E = 0 - 50 - 75 - 100 V V V I CBO