BD411 datasheet pdf

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BD411 datasheet pdf

Datasheet Information

Pages: 4

V CEO Collector-Emitter Voltage : BD439 : BD441 60 80 V V

V EBO Emitter-Base Voltage 5V

I C Collector Current (DC) 4A

I CP *Collector Current (Pulse) 7A

20 15 40 40 25 15 130 130 140 140 V CE (sat)* Collector-Emitter Saturation Voltage I C = 2A, I B = 0.2A0.8V V BE (on)* Base-Emitter ON Voltage V CE = 5V, I C = 10mA V CE = 1V, I C = 2A 0.58 1.5 V V f T Current Gain Bandwidth Product V CE = 1V, I C = 250mA3MHz BD439/441 Medium Power Linear and Switching Applications • Complement to BD440, BD442 respectively 1 TO-126 1. Emitter 2.Collector 3.Base

Specifications
©2001 Fairchild Semiconductor CorporationRev. A1, June 2001 BD439/441 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25°C unless otherwise noted Electrical Characteristics T C =25°C unless otherwise noted * Pulse Test: PW=300μs, duty Cycle=1.5% Pulsed SymbolParameterValueUnits V CBO Collector-Base Voltage : BD439 : BD441 60 80 V V V CES Collector-Emitter Voltage : BD439 : BD441 60 80 V V

I B Base Current 1A P C Collector Dissipation (T C =25°C) 36W T J Junction Temperature150°C T STG Storage Temperature- 65 ~ 150°C SymbolParameterTest ConditionMin.Typ.Max.Units V CEO (sus)* Collector-Emitter Sustaining Voltage : BD439 : BD441 I C = 100mA, I B = 060 80 V V I CBO Collector Cut-off Current : BD439 : BD441 V CB = 60V, I E = 0 V CB = 80V, I E = 0 100 100 μA μA I CES Collector Cut-off Current : BD439 : BD441 V CE = 60V, V BE = 0 V CE = 80V, V BE = 0 100 100 μA μA I EBO Emitter Cut-off Current V EB = 5V, I C = 01mA h FE * DC Current Gain : BD439 : BD441 : BD439 : BD441 : BD439 : BD441 V CE = 5V, I C = 10mA V CE =1V, I C = 500mA V CE = 1V, I C = 2A