BD442 datasheet pdf

©2001 Fairchild Semiconductor CorporationRev. A1, June 2001 BD440/442 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25°C unless otherwise noted Electrical Characteristics T C =25°C unless otherwise noted * Pulse Test: PW=300μs, duty Cycle=1.5% Pulsed SymbolParameterValueUnits V CBO Collector-Base Voltage : BD440 : BD442 - 60 - 80 V V V CES Collector-Emitter Voltage : BD440 : BD442 - 60 - 80 V V V CEO Collector-Emitter Voltage : BD440 : BD442 - 60 - 80 V V V EBO Emitter-Base Voltage - 5V I C Collector Current (DC) - 4A I CP *Collector Current (Pulse) - 7A I B Base Current - 1A P C Collector Dissipation (T C =25°C) 36W T J Junction Temperature150°C T STG Storage Temperature- 65 ~ 1 50°C SymbolParameterTest ConditionMin.Typ.Max.Units V CEO (sus) Collector-Emitter Sustaining Voltage : BD440 : BD442 I C = - 100mA, I B = 0-60 -80 V V I CBO Collector Cut-off Current : BD440 : BD442 V CB = - 60V, I E = 0 V CB = - 80V, I E = 0 - 100 - 100 μA μA I CES Collector Cut-off Current : BD440 : BD442 V CE = - 60V, V BE = 0 V CE = - 80V, V BE = 0 - 100 - 100 μA μA I EBO Emitter Cut-off Current V EB = - 5V, I C = 0 - 1mA h FE * DC Current Gain : BD440 : BD442 : BD440 : BD442 : BD440 : BD442 V CE = - 5V, I C = - 10mA V CE = - 1V, I C = - 500mA V CE = - 1V, I C = - 2A 20 15 40 40 25 15 140 140 140 140 V CE (sat)* Collector-Emitter Saturation Voltage I C = - 2A, I B = - 0.2A- 0.8V V BE (on)* Base-Emitter ON Voltage V CE = - 5V, I C = - 10mA V CE = -1 V, I C = - 2A -0.58 - 1.5 V V f T Current Gain Bandwidth Product V CE = - 1V, I C = - 250mA 3MHz BD440/442 Medium Power Linear and Switching Applications • Complement to BD439, BD441 respectively 1 TO-126 1. Emitter 2.Collector 3.Base

Specifications