BD536 (1) datasheet pdf

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Datasheet Information

Pages: 4

I EBO Emitter Cut-off Current V EB = - 5V, I C = 0 - 1mA

V CEO Collector-Emitter Voltage : BD534 : BD536 : BD538 - 45 - 60 - 80 V V V

I CES Collector Cut-off Current : BD534 : BD536 : BD538 V CE = - 45V, V BE = 0 V CE = - 60V, V BE = 0 V CE = - 80V, V BE = 0 - 100 - 100 - 100 μA μA μA

Specifications

©2000 Fairchild Semiconductor InternationalRev. A, February 2000 BD534/536/538 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25°C unless otherwise noted Electrical Characteristics T C =25°C unless otherwise noted * Pulse Test: PW =300μs, duty Cycle =1.5% Pulsed SymbolParameterValueUnits V CBO Collector-Base Voltage : BD534 : BD536 : BD538 - 45 - 60 - 80 V V V

V EBO Emitter-Base Voltage - 5V I C Collector Current (DC) - 8A I B Base Current - 1A P C Collector Dissipation (T C =25°C) 50W T J Junction Temperature 150°C T STG Storage Temperature- 65 ~ 150°C SymbolParameterTest ConditionMin.Typ.Max.Units I CBO Collector Cut-off Current : BD534 : BD536 : BD538 V CB = - 45V, I E = 0 V CB = - 60V, I E = 0 V CB = - 80V, I E = 0 - 100 - 100 - 100 μA μA μA

BD536 (1) datasheet pdf