BD537 (1) datasheet pdf

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BD537 (1) datasheet pdf

Datasheet Information

Pages: 4

I EBO Emitter Cut-off Current V EB = 5V, I C = 0 1mA

V CEO Collector-Emitter Voltage : BD533 : BD535 : BD537 45 60 80 V V V

I CES Collector Cut-off Current : BD533 : BD535 : BD537 V CE = 45V, V BE = 0 V CE = 60V, V BE = 0 V CE = 80V, V BE = 0 100 100 100 μA μA μA

Specifications
©2000 Fairchild Semiconductor InternationalRev. A, February 2000 BD533/535/537 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25°C unless otherwise noted Electrical Characteristics T C =25°C unless otherwise noted * Pulse Test: PW =300μs, duty Cycle =1.5% Pulsed SymbolParameterValueUnits V CBO Collector-Base Voltage : BD533 : BD535 : BD537 45 60 80 V V V V CES Collector-Emitter Voltage : BD533 : BD535 : BD537 45 60 80 V V V

V EBO Emitter-Base Voltage 5V I C Collector Current 8A I B Base Current 1A P C Collector Dissipation (T C =25°C) 50W T J Junction Temperature150°C T STG Storage Temperature- 65 ~ 150°C SymbolParameterTest ConditionMin.Typ.Max.Units I CBO Collector Cut-off Current : BD533 : BD535 : BD537 V CB = 45V, I E = 0 V CB = 60V, I E = 0 V CB = 80V, I E = 0 100 100 100 μA μA μA