BD539B datasheet pdf

BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS PRODUCT INFORMATION 1 JUNE 1973 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. lDesigned for Complementary Use with the BD540 Series l45 W at 25°C Case Temperature l5 A Continuous Collector Current lUp to 120 V V CEO rating B C E TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA 1 2 3 absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES:1.These values apply when the base-emitter diode is open circuited. 2.Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. 3.Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. RATINGSYMBOLVALUEUNIT Collector-base voltage BD539 BD539A BD539B BD539C BD539D V CBO 40 60 80 100 120 V Collector-emitter voltage (see Note 1) BD539 BD539A BD539B BD539C BD539D V CEO 40 60 80 100 120 V Emitter-base voltageV EBO 5V Continuous collector currentI C 5A Continuous device dissipation at (or below) 25°C case temperature (see Note 2)P tot 45W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)P tot 2W Operating free air temperature rangeT A -65 to +150°C Operating junction temperature rangeT j -65 to +150°C Storage temperature rangeT stg -65 to +150°C Lead temperature 3.2 mm from case for 10 secondsT L 260°C

Specifications