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BD543, BD543A, BD543B, BD543C NPN SILICON POWER TRANSISTORS PRODUCT INFORMATION 1 JUNE 1973 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. lDesigned for Complementary Use with the BD544 Series l70 W at 25°C Case Temperature l8 A Continuous Collector Current l10 A Peak Collector Current lCustomer-Specified Selections Available B C E TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA 1 2 3 absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES:1.This value applies for t p ≤ 0.3 ms, duty cycle ≤ 10%. 2.Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3.Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. RATINGSYMBOLVALUEUNIT Collector-base voltage (I E = 0) BD543 BD543A BD543B BD543C V CBO 40 60 80 100 V Collector-emitter voltage (I B = 0) BD543 BD543A BD543B BD543C V CEO 40 60 80 100 V Emitter-base voltageV EBO 5V Continuous collector currentI C 8A Peak collector current (see Note 1)I CM 10A Continuous device dissipation at (or below) 25°C case temperature (see Note 2)P tot 70W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)P tot 2W Operating free air temperature rangeT A -65 to +150°C Operating junction temperature rangeT j -65 to +150°C Storage temperature rangeT stg -65 to +150°C Lead temperature 3.2 mm from case for 10 secondsT L 260°C