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BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS PRODUCT INFORMATION 1 JUNE 1973 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. lDesigned for Complementary Use with the BD543 Series l70 W at 25°C Case Temperature l8 A Continuous Collector Current l10 A Peak Collector Current lCustomer-Specified Selections Available B C E TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA 1 2 3 absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES:1.This value applies for t p ≤ 0.3 ms, duty cycle ≤ 10%. 2.Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3.Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. RATINGSYMBOLVALUEUNIT Collector-base voltage (I E = 0) BD544 BD544A BD544B BD544C V CBO -40 -60 -80 -100 V Collector-emitter voltage (I B = 0) BD544 BD544A BD544B BD544C V CEO -40 -60 -80 -100 V Emitter-base voltageV EBO -5V Continuous collector currentI C -8A Peak collector current (see Note 1)I CM -10A Continuous device dissipation at (or below) 25°C case temperature (see Note 2)P tot 70W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)P tot 2W Operating free air temperature rangeT A -65 to +150°C Operating junction temperature rangeT j -65 to +150°C Storage temperature rangeT stg -65 to +150°C Lead temperature 3.2 mm from case for 10 secondsT L 260°C