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© Semiconductor Components Industries, LLC, 2013 December, 2013 − Rev. 15 1Publication Order Number: BD675/D BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G Plastic Medium-Power Silicon NPN Darlingtons This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features •High DC Current Gain •Monolithic Construction •Complementary to BD676, 676A, 678, 678A, 680, 680A, 682 •BD677, 677A, 679, 679A are Equivalent to MJE 800, 801, 802, 803 •These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS RatingSymbolValueUnit Collector−Emitter Voltage BD675G, BD675AG BD677G, BD677AG BD679G, BD679AG BD681G V CEO 45 60 80 100 Vdc Collector−Base Voltage BD675G, BD675AG BD677G, BD677AG BD679G, BD679AG BD681G V CBO 45 60 80 100 Vdc Emitter−Base VoltageV EBO 5.0Vdc Collector CurrentI C 4.0Adc Base CurrentI B 1.0Adc Total Device Dissipation @ T C = 25°C Derate above 25°C P D 40 0.32 W W/°C Operating and Storage Junction Temperature Range T J , T stg – 55 to + 150°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction−to−Case R q JC 3.13°C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON 60, 80, 100 VOLTS, 40 WATTS MARKING DIAGRAMS See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. ORDERING INFORMATION BD6xx/BD6xxA = Device Code x = 75, 77, 79, 81 Y= Year WW= Work Week G= Pb−Free Package COLLECTOR 2, 4 BASE 3 EMITTER 1 TO−225 CASE 77−09 STYLE 1 1 2 3 YWW BD6xxG YWW BD6xxAG