BD679A (1) datasheet pdf

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BD679A (1) datasheet pdf

Datasheet Information

Pages: 4

V EBO Emitter-Base Voltage 5V

V CEO Collector-Emitter Voltage : BD675A : BD677A : BD679A : BD681 45 60 80 100 V V V V

I C Collector Current (DC) 4A

I CP *Collector Current (Pulse) 6A

Specifications
©2000 Fairchild Semiconductor InternationalRev. A, February 2000 BD675A/677A/679A/681 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25°C unless otherwise noted Electrical Characteristics T C =25°C unless otherwise noted * Pulse Test: PW=300μs, duty Cycle=1.5% Pulsed SymbolParameterValueUnits V CBO Collector-Base Voltage : BD675A : BD677A : BD679A : BD681 45 60 80 100 V V V V

I B Base Current100mA P C Collector Dissipation (T C =25°C) 40W T J Junction Temperature150°C T STG Storage Temperature- 65 ~ 150°C SymbolParameterTest ConditionMin.Typ.Max.Units V CEO (sus)*Collector-Emitter Sustaining Voltage : BD675A : BD677A : BD679A : BD681 I C = 50mA, I B = 0 45 60 80 100 V V V V I CBO Collector-Base Voltage : BD675A : BD677A : BD679A : BD681 V CB = 45V, I E = 0 V CB = 60V, I E = 0 V CB = 80V, I E = 0 V CB = 100V, V BE = 0 200 200 200 200 μA μA μA μA I CEO Collector Cut-off Current : BD675A : BD677A : BD679A : BD681 V CE = 45V, V BE = 0 V CE = 60V, V BE = 0 V CE = 80V, V BE = 0 V CE = 100V, V BE = 0 500 500 500 500 μA μA μA μA I EBO Emitter Cut-off Current V EB = 5V, I C = 02mA h FE * DC Current Gain : BD675A/677A/679A : BD681 V CE = 3V, I C = 2A V CE = 3V, I C = 1.5A 750 750 V CE (sat)* Collector-Emitter Saturation Voltage : BD675A/677A/679A : BD681 I C = 2A, I B = 40mA I C = 1.5A, I B = 30mA 2.8 2.5 V V V BE (on)* Base-Emitter ON Voltage : BD675A/677A/679A : BD681 V CE = 3V, I C = 2A V CE = 3V, I C = 1.5A 2.5 2.5 V V BD675A/677A/679A/681 Medium Power Linear and Switching Applications • Medium Power Darlington TR • Complement to BD676A, BD678A, BD680A and BD682 respectively 1 TO-126 1. Emitter 2.Collector 3.Base