o
C
90W
T
stg
Storage Temperature-65 to 150
o
C
T
j
Max. Operating Junction Temperature150
o
C
For PNP types voltage and current values are negative.
1
2
3
TO-220
1/6
Specifications
BD909/911
BD910/912
COMPLEMENTARY SILICON POWER TRANSISTORS
nSTMicroelectronics PREFERRED
SALESTYPES
DESCRIPTION
The BD909 and BD911 are silicon Epitaxial-Base
NPN power transistors mounted in Jedec TO-220
plastic package. They are intented for use in
power linear and switching applications.
The complementary PNP types are BD910 and
BD912 respectively.
INTERNAL SCHEMATIC DIAGRAM
October 1999
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
NPNBD909BD911
PNPBD910BD912
V
CBO
Collector-Base Voltage (I
E
= 0)80100V
V
CEO
Collector-Emitter Voltage (I
B
= 0)80100V
V
EBO
Emitter-Base Voltage (I
C
=0)5V
I
E
,I
C
Collector Current15A
I
B
Base Current5A
P
tot
Total Dissipation at T
c
≤
25