BDB01D datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data One Watt Amplifier Transistors NPN Silicon MAXIMUM RATINGS RatingSymbolBDB01CBDB01DUnit Collector – Emitter VoltageV CEO 80100Vdc Collector – Base VoltageV CES 80100Vdc Emitter – Base VoltageV EBO 5.0Vdc Collector Current — ContinuousI C 0.5Adc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 1.0 8.0 Watt mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 2.5 20 Watt mW/°C Operating and Storage Junction Temperature Range T J , T stg – 55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction to Ambient R qJA 125°C/W Thermal Resistance, Junction to Case R qJC 50°C/W ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinMaxUnit OFF CHARACTERISTICS Collector – Emitter Voltage (I C = 10 mA, I B = 0)BDB01C BDB01D V (BR)CEO 80 100 — — Vdc Collector Cutoff Current (V CB = 80 V, I E = 0)BDB01C (V CB = 100 V, I E = 0)BDB01D I CBO — — 0.01 0.01 mAdc Emitter Cutoff Current (I C = 0, V EB = 5.0 V) I EBO —100nAdc Order this document by BDB01C/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BDB01C,D CASE 29–05, STYLE 1 TO–92 (TO–226AE) 1 2 3  Motorola, Inc. 1996 COLLECTOR 3 2 BASE 1 EMITTER

Specifications