BDB02C datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data One Watt Amplifier Transistors PNP Silicon MAXIMUM RATINGS RatingSymbolBDB02CBDB02DUnit Collector – Emitter VoltageV CEO –80–100Vdc Collector – Base VoltageV CES –80–100Vdc Emitter – Base VoltageV EBO –5.0Vdc Collector Current — ContinuousI C –0.5Adc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 1.0 8.0 Watt mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 2.5 20 Watt mW/°C Operating and Storage Junction Temperature Range T J , T stg – 55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction to Ambient R qJA 125°C/W Thermal Resistance, Junction to Case R qJC 50°C/W ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinMaxUnit OFF CHARACTERISTICS Collector – Emitter VoltageBDB02C (I C = –10 mA, I B = 0)BDB02D V (BR)CEO –80 –100 — — Vdc Collector Cutoff Current (V CB = –80 V, I E = 0)BDB02C (V CB = –100 V, I E = 0)BDB02D I CBO — — –0.1 –0.1 mAdc Emitter Cutoff Current (I C = 0, V EB = –5.0 V)I EBO —–100nAdc ON CHARACTERISTICS DC Current Gain (I C = –100 mA, V CE = –1.0 V) (I C = –500 mA, V CE = –2.0 V) h FE 40 25 400 — — Collector – Emitter Saturation Voltage (1) (I C = –1000 mA, I B = –100 mA)V CE(sat) —–0.7Vdc Collector – Emitter On Voltage (1) (I C = –1000 mA, V CE = –1.0 V)V BE(on) —–1.2Vdc DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (I C = –200 mA, V CE = –5.0 V, f = 20 MHz)f T 50—MHz Output Capacitance (V CB = –10 V, I E = 0, f = 1.0 MHz)C ob —30pF 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle 2.0%. Order this document by BDB02C/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BDB02C,D CASE 29–05, STYLE 1 TO–92 (TO–226AE) 1 2 3  Motorola, Inc. 1996 COLLECTOR 3 2 BASE 1 EMITTER

Specifications