BDC01D datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data One Watt Amplifier Transistor NPN Silicon MAXIMUM RATINGS RatingSymbolBDC01DUnit Collector – Emitter VoltageV CEO 100Vdc Collector – Base VoltageV CBO 100Vdc Emitter – Base VoltageV EBO 5.0Vdc Collector Current — ContinuousI C 0.5Adc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 1.0 8.0 Watts mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 2.5 20 Watts mW/°C Operating and Storage Junction Temperature Range T J , T stg – 55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction to Ambient R qJA 125°C/W Thermal Resistance, Junction to Case R qJC 50°C/W ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinMaxUnit OFF CHARACTERISTICS Collector – Emitter Voltage (I C = 10 mA, I B = 0) V (BR)CEO 100—Vdc Collector Cutoff Current (V CB = 100 V, I E = 0) I CBO —0.1 mAdc Emitter Cutoff Current (I C = 0, V EB = 5.0 V) I EBO —100nAdc Order this document by BDC01D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BDC01D CASE 29–05, STYLE 14 TO–92 (TO–226AE) 1 2 3  Motorola, Inc. 1996 COLLECTOR 2 3 BASE 1 EMITTER

Specifications