BDC05 datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data One Watt High Voltage Transistor NPN Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector – Emitter VoltageV CEO 300Vdc Collector – Base VoltageV CBO 300Vdc Emitter – Base VoltageV EBO 5.0Vdc Collector Current — ContinuousI C 500mAdc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 1.0 8.0 Watts mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 2.5 50 Watts mW/°C Operating and Storage Junction Temperature Range T J , T stg – 55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction to Ambient R qJA 125°C/W Thermal Resistance, Junction to Case R qJC 50°C/W ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (1) (I C = 1.0 mAdc, I B = 0) V (BR)CEO 300— Vdc Collector – Base Breakdown Voltage (I C = 100 mAdc, I E = 0) V (BR)CBO 300— Vdc Emitter – Base Breakdown Voltage (I E = 100 mAdc, I C = 0) V (BR)EBO 5.0— Vdc Collector Cutoff Current (V CB = 200 Vdc, I E = 0) I CBO —0.01 μAdc Emitter Cutoff Current (V EB = 5.0 Vdc, I C = 0) I EBO —10 μAdc 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. Order this document by BDC05/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BDC05 CASE 29–05, STYLE 14 TO–92 (TO–226AE) 1 2 3  Motorola, Inc. 1996 COLLECTOR 2 3 BASE 1 EMITTER

Specifications