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Semiconductor Group 1Nov-28-1996 BDP 947 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP948, BDP950 (PNP) TypeMarkingOrdering CodePin ConfigurationPackage BDP 947BDP 947Q62702-D13351 = B2 = C3 = E4 = CSOT-223 BDP 949BDP 949Q62702-D13371 = B2 = C3 = E4 = CSOT-223 Maximum Ratings ParameterSymbolValuesUnit Collector-emitter voltage BDP 947 BDP 949 V CEO 60 45 V Collector-base voltage BDP 947 BDP 949 V CBO 60 45 Emitter-base voltageV EBO 5 DC collector currentI C 3A Peak collector currentI CM 5 Base currentI B 200mA Peak base currentI BM 500 Total power dissipation, T S = 99°CP tot 3W Junction temperatureT j 150°C Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction ambient 1) R thJA ≤ 42 K/W Junction - soldering pointR thJS ≤ 17 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu
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