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BDP947, BDP949 1Aug-06-2001 Silicon NPN Transistor For AF driver and output stages High collector current High current gain Low collector-emitter saturation voltage Complementary types: BDP948, BDP950 (PNP) VPS05163 1 2 3 4 TypeMarkingPin ConfigurationPackage BDP947 BDP949 BDP 947 BDP 949 1 = B 1 = B 2 = C 2 = C 3 = E 3 = E 4 = C 4 = C SOT223 SOT223 Maximum Ratings Parameter BDP 947SymbolBDP 949Unit V60Collector-emitter voltageV CEO 45 Collector-base voltage4560V CBO V EBO 55Emitter-base voltage 3ADC collector currentI C Peak collector current5I CM Base currentI B 200mA Peak base currentI BM 500 Total power dissipation, T S = 99 °CW3P tot °CJunction temperature150T j Storage temperatureT stg -65 ... 150 Thermal Resistance Junction - soldering point 1) R thJS 17K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance