BDP950 datasheet pdf

Semiconductor Group 1Nov-28-1996 BDP 948 PNP Silicon AF Power Transistor • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP947, BDP949 (NPN) TypeMarkingOrdering CodePin ConfigurationPackage BDP 948BDP 948Q62702-D13361 = B2 = C3 = E4 = CSOT-223 BDP 950BDP 950Q62702-D13381 = B2 = C3 = E4 = CSOT-223 Maximum Ratings ParameterSymbolValuesUnit Collector-emitter voltage BDP 948 BDP 950 V CEO 60 45 V Collector-base voltage BDP 948 BDP 950 V CBO 60 45 Emitter-base voltageV EBO 5 DC collector currentI C 3A Peak collector currentI CM 5 Base currentI B 200mA Peak base currentI BM 500 Total power dissipation, T S = 99°CP tot 3W Junction temperatureT j 150°C Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction ambient 1) R thJA ≤ 42K/W Junction - soldering pointR thJS ≤ 17 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu

Specifications