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BDP952...BDP956 1Jul-06-2001 PNP Silicon AF Power Transistors For AF driver and output stages High current gain Low collector-emitter saturation voltage Complementary types: BDP951...BDP955 (NPN) VPS05163 1 2 3 4 TypeMarkingPin ConfigurationPackage BDP952 BDP954 BDP956 BDP 952 BDP 954 BDP 956 1 = B 1 = B 1 = B 2 = C 2 = C 2 = C 3 = E 3 = E 3 = E 4 = C 4 = C 4 = C SOT223 SOT223 SOT223 Maximum Ratings ParameterSymbol BDP952BDP954BDP956 Unit Collector-emitter voltage V CEO 80100120V Collector-base voltage V CBO 100120140 Emitter-base voltage V EBO 555 DC collector current I C 3A Peak collector current I CM 5 Base current I B 200mA Peak base current I BM 500 Total power dissipation, T S = 99 °CP tot 3W Junction temperature T j 150°C Storage temperature T stg -65 ... 150 Thermal Resistance Junction - soldering point 1) R thJS 17K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance
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